Leaked Samsung Galaxy Note 9 Benchmark Scores Beat iPhone X and Galaxy S9
- Benchmark scores of the upcoming Samsung Galaxy Note 9 have surfaced indicating that it could be more powerful than all existing smartphones.
- The new Samsung flagship is scheduled for launch, and it will bring all of the usual flagship Note features including S-Pen support.
- The upcoming flagship will include the Exynos 9820, which is said to be the successor of Samsung’s own 9810 that is being used in current flagship devices from the company.
Samsung Galaxy Note 9 is creating a lot of hype among fans even before its release. The upcoming flagship from Samsung had its benchmark scores leaked recently which beat the current flagship devices from Apple and Samsung by a big margin. The device managed to rack up a single-core score of 12,246 and a multi-core score of 4,089. The scores put the upcoming flagship well ahead of rest of the competition. Apple’s own A11 Bionic chip will finally be dethroned with the Exynos 9820 becoming the most powerful mobile processor.
Image Courtesy of TechRadar
Samsung is readying its own Exynos 9820 SoC for the upcoming flagship device. The Samsung Galaxy S9 and S9+ currently use the 9810, which is significantly slower according to the benchmarks. However, in real life usage, the difference should be minimal as the hardware on most current flagship smartphones is more than adequate to run all of your favorite apps and multitask without a hitch.
It is unknown if the benchmark scores of the Galaxy Note 9 are legitimate as there are questionable hardware specifications like the inclusion of a 4GB RAM unit, which is unlikely as most manufacturers have already moved on to 6GB or 8GB RAM for Android flagships. It is expected that the Note 9 will be coming with Android P out of the box and include S Pen support. Like other Samsung flagship devices, Samsung is also scheduled to release a Qualcomm-powered Note 9 device with LTE support in the US for specific carriers. The Galaxy Note 9 is slated for release on August 9.
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